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GE12050EEA3
GE Aerospace
GE12050EEA3
1200V 475A 6-Pack SiC Module
Module
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GE12050EEA3 Attributes
TYPE | DESCRIPTION | SELECT |
---|---|---|
Series | SiC Power | |
Technology | Silicon Carbide (SiC) | |
Configuration | 6 N-Channel (3-Phase Bridge) | |
FET Feature | - | |
Drain to Source Voltage (Vdss) | 1200V (1.2kV) | |
Current - Continuous Drain (Id) @ 25°C | 475A (Tc) | |
Rds On (Max) @ Id, Vgs | 4.4mOhm @ 475A, 20V | |
Vgs(th) (Max) @ Id | 4.5V @ 160mA | |
Gate Charge (Qg) (Max) @ Vgs | 1248nC @ 18V | |
Input Capacitance (Ciss) (Max) @ Vds | 29300pF @ 600V | |
Power - Max | 1250W (Tc) | |
Operating Temperature | -55°C ~ 150°C (Tc) | |
Mounting Type | Chassis Mount | |
Package / Case | Module | |
Supplier Device Package | - |
4,226
In Stock
Minimum: 1
Unit Price:
$3231.00
Total Price:
$3231.00
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