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GPIXV30DFN

GaNPower
GPIXV30DFN
GANFET N-CH 1200V 30A DFN8X8
8-WDFN Exposed Pad
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GPIXV30DFN
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GPIXV30DFN Attributes
TYPE DESCRIPTION SELECT
Series -
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 30A
Drive Voltage (Max Rds On, Min Rds On) -
Rds On (Max) @ Id, Vgs -
Vgs(th) (Max) @ Id -
Gate Charge (Qg) (Max) @ Vgs -
Vgs (Max) -
Input Capacitance (Ciss) (Max) @ Vds -
FET Feature -
Power Dissipation (Max) -
Operating Temperature -
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package 8-DFN (8x8)
Package / Case 8-WDFN Exposed Pad
889 In Stock
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Minimum: 1
Unit Price: N/A
Total Price: N/A
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