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GPIRGIC15DFV

GaNPower
GPIRGIC15DFV
Power IC based on Power GaN HEMT
8-WDFN Exposed Pad
Active
GPIRGIC15DFV
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GPIRGIC15DFV Attributes
TYPE DESCRIPTION SELECT
Series -
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 900 V
Current - Continuous Drain (Id) @ 25°C 2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 8V
Rds On (Max) @ Id, Vgs 105mOhm @ 2.5A, 0V
Vgs(th) (Max) @ Id -
Gate Charge (Qg) (Max) @ Vgs -
Vgs (Max) -
Input Capacitance (Ciss) (Max) @ Vds -
FET Feature -
Power Dissipation (Max) -
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-DFN (8x8)
Package / Case 8-WDFN Exposed Pad
7,417 In Stock
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Minimum: 1
Unit Price: $9.36
Total Price: $9.36
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