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GPIHV5DK

GaNPower
GPIHV5DK
GaNFET N-CH 1200V 5A TO252
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Active
GPIHV5DK
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GPIHV5DK Attributes
TYPE DESCRIPTION SELECT
Series -
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 5A
Drive Voltage (Max Rds On, Min Rds On) 6V
Rds On (Max) @ Id, Vgs -
Vgs(th) (Max) @ Id 1.7V @ 3.5mA
Gate Charge (Qg) (Max) @ Vgs 1.9 nC @ 6 V
Vgs (Max) +7.5V, -12V
Input Capacitance (Ciss) (Max) @ Vds 90 pF @ 700 V
FET Feature -
Power Dissipation (Max) -
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package -
Package / Case -
388 In Stock
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Minimum: 1
Unit Price: $3.80
Total Price: $3.80
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