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GPIHV30DFN

GaNPower
GPIHV30DFN
GANFET N-CH 1200V 30A DFN8X8
Die
Active
GPIHV30DFN
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GPIHV30DFN Attributes
TYPE DESCRIPTION SELECT
Series -
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 30A
Drive Voltage (Max Rds On, Min Rds On) 6V
Rds On (Max) @ Id, Vgs -
Vgs(th) (Max) @ Id 1.4V @ 3.5mA
Gate Charge (Qg) (Max) @ Vgs 8.25 nC @ 6 V
Vgs (Max) +7.5V, -12V
Input Capacitance (Ciss) (Max) @ Vds 236 pF @ 400 V
FET Feature -
Power Dissipation (Max) -
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package Die
Package / Case Die
7,221 In Stock
rhos iso9001 iso13485 iso14001 iso45001
Minimum: 1
Unit Price: $22.00
Total Price: $22.00
This price is for reference only, please contact us for now price support@easev.net.

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