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GPI65030TO5L
GaNPower
GPI65030TO5L
GaNFET N-CH 650V 30A TO263-5L
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GPI65030TO5L Attributes
TYPE | DESCRIPTION | SELECT |
---|---|---|
Series | - | |
FET Type | N-Channel | |
Technology | GaNFET (Gallium Nitride) | |
Drain to Source Voltage (Vdss) | 650 V | |
Current - Continuous Drain (Id) @ 25°C | 30A | |
Drive Voltage (Max Rds On, Min Rds On) | 6V | |
Rds On (Max) @ Id, Vgs | - | |
Vgs(th) (Max) @ Id | 1.4V @ 3.5mA | |
Gate Charge (Qg) (Max) @ Vgs | 5.8 nC @ 6 V | |
Vgs (Max) | +7.5V, -12V | |
Input Capacitance (Ciss) (Max) @ Vds | 241 pF @ 400 V | |
FET Feature | - | |
Power Dissipation (Max) | - | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Grade | - | |
Qualification | - | |
Mounting Type | Surface Mount | |
Supplier Device Package | - | |
Package / Case | - |
2,944
In Stock
Minimum: 1
Unit Price:
$15.00
Total Price:
$15.00
This price is for reference only, please contact us for now price support@easev.net.