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FQU9N25TU

Fairchild Semiconductor
FQU9N25TU
POWER FIELD-EFFECT TRANSISTOR, 7
TO-251-3 Short Leads, IPak, TO-251AA
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FQU9N25TU
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FQU9N25TU Attributes
TYPE DESCRIPTION SELECT
Series QFET®
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 V
Current - Continuous Drain (Id) @ 25°C 7.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 420mOhm @ 3.7A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 700 pF @ 25 V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 55W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package I-PAK
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
6,159 In Stock
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Minimum: 1
Unit Price: $0.56
Total Price: $0.56
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