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FQPF11N50CF

Fairchild Semiconductor
FQPF11N50CF
POWER FIELD-EFFECT TRANSISTOR, 1
TO-220-3 Full Pack
Active
FQPF11N50CF
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FQPF11N50CF Attributes
TYPE DESCRIPTION SELECT
Series FRFET®
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 550mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 55 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2055 pF @ 25 V
FET Feature -
Power Dissipation (Max) 48W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-220F-3
Package / Case TO-220-3 Full Pack
2,783 In Stock
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Minimum: 1
Unit Price: $1.56
Total Price: $1.56
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