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FCH76N60N

Fairchild Semiconductor
FCH76N60N
POWER FIELD-EFFECT TRANSISTOR, 7
TO-247-3
Active
FCH76N60N
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FCH76N60N Attributes
TYPE DESCRIPTION SELECT
Series SupreMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 76A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 36mOhm @ 38A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 285 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 12385 pF @ 100 V
FET Feature -
Power Dissipation (Max) 543W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-247
Package / Case TO-247-3
7,285 In Stock
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Minimum: 1
Unit Price: $15.13
Total Price: $15.13
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