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EPC2302ENGRT

EPC
EPC2302ENGRT
TRANS GAN 100V DIE .0018OHM
7-PowerWQFN
Active
EPC2302ENGRT
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EPC2302ENGRT Attributes
TYPE DESCRIPTION SELECT
Series eGaN®
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 101A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 1.8mOhm @ 50A, 5V
Vgs(th) (Max) @ Id 2.5V @ 14mA
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 5 V
Vgs (Max) +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds 3200 pF @ 50 V
FET Feature -
Power Dissipation (Max) -
Operating Temperature -40°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package 7-QFN (3x5)
Package / Case 7-PowerWQFN
5,133 In Stock
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Minimum: 1
Unit Price: N/A
Total Price: N/A
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