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EPC2215

EPC
EPC2215
GAN TRANS 200V 8MOHM BUMPED DIE
Die
Active
EPC2215
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EPC2215 Attributes
TYPE DESCRIPTION SELECT
Series -
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 32A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 8mOhm @ 20A, 5V
Vgs(th) (Max) @ Id 2.5V @ 6mA
Gate Charge (Qg) (Max) @ Vgs 17.7 nC @ 5 V
Vgs (Max) +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds 1790 pF @ 100 V
FET Feature -
Power Dissipation (Max) -
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package Die
Package / Case Die
6,787 In Stock
rhos iso9001 iso13485 iso14001 iso45001
Minimum: 1
Unit Price: $3.39
Total Price: $3.39
This price is for reference only, please contact us for now price support@easev.net.

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