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EPC2111

EPC
EPC2111
GAN TRANS ASYMMETRICAL HALF BRID
Die
Active
EPC2111
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EPC2111 Attributes
TYPE DESCRIPTION SELECT
Series -
Technology GaNFET (Gallium Nitride)
Configuration 2 N-Channel (Half Bridge)
FET Feature -
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 16A (Ta)
Rds On (Max) @ Id, Vgs 19mOhm @ 15A, 5V, 8mOhm @ 15A, 5V
Vgs(th) (Max) @ Id 2.5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs 2.2nC @ 5V, 5.7nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 230pF @ 15V, 590pF @ 15V
Power - Max -
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Die
233 In Stock
rhos iso9001 iso13485 iso14001 iso45001
Minimum: 1
Unit Price: $1.58
Total Price: $1.58
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