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EPC2111
EPC
EPC2111
GAN TRANS ASYMMETRICAL HALF BRID
Die
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EPC2111 Attributes
TYPE | DESCRIPTION | SELECT |
---|---|---|
Series | - | |
Technology | GaNFET (Gallium Nitride) | |
Configuration | 2 N-Channel (Half Bridge) | |
FET Feature | - | |
Drain to Source Voltage (Vdss) | 30V | |
Current - Continuous Drain (Id) @ 25°C | 16A (Ta) | |
Rds On (Max) @ Id, Vgs | 19mOhm @ 15A, 5V, 8mOhm @ 15A, 5V | |
Vgs(th) (Max) @ Id | 2.5V @ 5mA | |
Gate Charge (Qg) (Max) @ Vgs | 2.2nC @ 5V, 5.7nC @ 5V | |
Input Capacitance (Ciss) (Max) @ Vds | 230pF @ 15V, 590pF @ 15V | |
Power - Max | - | |
Operating Temperature | -40°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Package / Case | Die | |
Supplier Device Package | Die |
233
In Stock
Minimum: 1
Unit Price:
$1.58
Total Price:
$1.58
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