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EPC2110ENGRT
EPC
EPC2110ENGRT
GAN TRANS 2N-CH 120V BUMPED DIE
Die
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EPC2110ENGRT Attributes
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Series | eGaN® | |
| Technology | GaNFET (Gallium Nitride) | |
| Configuration | 2 N-Channel (Dual) Common Source | |
| FET Feature | - | |
| Drain to Source Voltage (Vdss) | 120V | |
| Current - Continuous Drain (Id) @ 25°C | 3.4A | |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 4A, 5V | |
| Vgs(th) (Max) @ Id | 2.5V @ 700µA | |
| Gate Charge (Qg) (Max) @ Vgs | 0.8nC @ 5V | |
| Input Capacitance (Ciss) (Max) @ Vds | 80pF @ 60V | |
| Power - Max | - | |
| Operating Temperature | -40°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | Die | |
| Supplier Device Package | Die |
1,814
In Stock
Minimum: 1
Unit Price:
$0.98
Total Price:
$0.98
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