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EPC2108
EPC
EPC2108
GANFET 3 N-CH 60V/100V 9BGA
9-VFBGA
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EPC2108 Attributes
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Series | eGaN® | |
| Technology | GaNFET (Gallium Nitride) | |
| Configuration | 3 N-Channel (Half Bridge + Synchronous Bootstrap) | |
| FET Feature | - | |
| Drain to Source Voltage (Vdss) | 60V, 100V | |
| Current - Continuous Drain (Id) @ 25°C | 1.7A, 500mA | |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 2.5A, 5V, 3.3Ohm @ 2.5A, 5V | |
| Vgs(th) (Max) @ Id | 2.5V @ 100µA, 2.5V @ 20µA | |
| Gate Charge (Qg) (Max) @ Vgs | 0.22nC @ 5V, 0.044nC @ 5V | |
| Input Capacitance (Ciss) (Max) @ Vds | 22pF @ 30V, 7pF @ 30V | |
| Power - Max | - | |
| Operating Temperature | -40°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | 9-VFBGA | |
| Supplier Device Package | 9-BGA (1.35x1.35) |
6,478
In Stock
Minimum: 1
Unit Price:
$1.76
Total Price:
$1.76
This price is for reference only, please contact us for now price support@easev.net.
