Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
EPC2106ENGRT
EPC
EPC2106ENGRT
GANFET 2N-CH 100V 1.7A DIE
Die
Active
Payment Methods:
Shipping Methods:
EPC2106ENGRT Attributes
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Series | eGaN® | |
| Technology | GaNFET (Gallium Nitride) | |
| Configuration | 2 N-Channel (Half Bridge) | |
| FET Feature | - | |
| Drain to Source Voltage (Vdss) | 100V | |
| Current - Continuous Drain (Id) @ 25°C | 1.7A | |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 2A, 5V | |
| Vgs(th) (Max) @ Id | 2.5V @ 600µA | |
| Gate Charge (Qg) (Max) @ Vgs | 0.73nC @ 5V | |
| Input Capacitance (Ciss) (Max) @ Vds | 75pF @ 50V | |
| Power - Max | - | |
| Operating Temperature | -40°C ~ 150°C (TJ) | |
| Grade | - | |
| Qualification | - | |
| Mounting Type | Surface Mount | |
| Package / Case | Die | |
| Supplier Device Package | Die |
51
In Stock
Minimum: 1
Unit Price:
N/A
Total Price:
N/A
This price is for reference only, please contact us for now price support@easev.net.
