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EPC2105
EPC
EPC2105
GAN TRANS ASYMMETRICAL HALF BRID
Die
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EPC2105 Attributes
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Series | eGaN® | |
| Technology | GaNFET (Gallium Nitride) | |
| Configuration | 2 N-Channel (Half Bridge) | |
| FET Feature | - | |
| Drain to Source Voltage (Vdss) | 80V | |
| Current - Continuous Drain (Id) @ 25°C | 9.5A, 38A | |
| Rds On (Max) @ Id, Vgs | 14.5mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V | |
| Vgs(th) (Max) @ Id | 2.5V @ 2.5mA, 2.5V @ 10mA | |
| Gate Charge (Qg) (Max) @ Vgs | 2.5nC @ 5V, 10nC @ 5V | |
| Input Capacitance (Ciss) (Max) @ Vds | 300pF @ 40V, 1100pF @ 40V | |
| Power - Max | - | |
| Operating Temperature | -40°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | Die | |
| Supplier Device Package | Die |
4,916
In Stock
Minimum: 1
Unit Price:
$5.83
Total Price:
$5.83
This price is for reference only, please contact us for now price support@easev.net.
