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EPC2100ENGRT

EPC
EPC2100ENGRT
GANFET 2 N-CH 30V 9.5A/38A DIE
Die
Active
EPC2100ENGRT
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EPC2100ENGRT Attributes
TYPE DESCRIPTION SELECT
Series eGaN®
Technology GaNFET (Gallium Nitride)
Configuration 2 N-Channel (Half Bridge)
FET Feature -
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 10A (Ta), 40A (Ta)
Rds On (Max) @ Id, Vgs 8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V
Vgs(th) (Max) @ Id 2.5V @ 4mA, 2.5V @ 16mA
Gate Charge (Qg) (Max) @ Vgs 4.9nC @ 15V, 19nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds 475pF @ 15V, 1960pF @ 15V
Power - Max -
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Die
6,348 In Stock
rhos iso9001 iso13485 iso14001 iso45001
Minimum: 1
Unit Price: $4.61
Total Price: $4.61
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