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EPC2050

EPC
EPC2050
TRANS GAN BUMPED DIE
Die
Active
EPC2050
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EPC2050 Attributes
TYPE DESCRIPTION SELECT
Series eGaN®
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 350 V
Current - Continuous Drain (Id) @ 25°C 6.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 180mOhm @ 6A, 5V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 4 nC @ 5 V
Vgs (Max) +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds 628 pF @ 280 V
FET Feature -
Power Dissipation (Max) -
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package Die
Package / Case Die
477 In Stock
rhos iso9001 iso13485 iso14001 iso45001
Minimum: 1
Unit Price: $1.99
Total Price: $1.99
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