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EPC2049ENGRT

EPC
EPC2049ENGRT
GANFET N-CH 40V 16A DIE
Die
Active
EPC2049ENGRT
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EPC2049ENGRT Attributes
TYPE DESCRIPTION SELECT
Series eGaN®
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 16A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 5mOhm @ 15A, 5V
Vgs(th) (Max) @ Id 2.5V @ 6mA
Gate Charge (Qg) (Max) @ Vgs 7.6 nC @ 5 V
Vgs (Max) +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds 805 pF @ 20 V
FET Feature -
Power Dissipation (Max) -
Operating Temperature -40°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package Die
Package / Case Die
8,593 In Stock
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