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EPC2031ENGRT

EPC
EPC2031ENGRT
GANFET NCH 60V 31A DIE
Die
Active
EPC2031ENGRT
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EPC2031ENGRT Attributes
TYPE DESCRIPTION SELECT
Series eGaN®
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 31A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 2.6mOhm @ 30A, 5V
Vgs(th) (Max) @ Id 2.5V @ 15mA
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 5 V
Vgs (Max) +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds 1800 pF @ 300 V
FET Feature -
Power Dissipation (Max) -
Operating Temperature -40°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package Die
Package / Case Die
1,659 In Stock
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