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EPC2029

EPC
EPC2029
GANFET N-CH 80V 48A DIE
Die
Active
EPC2029
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EPC2029 Attributes
TYPE DESCRIPTION SELECT
Series eGaN®
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 48A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 3.2mOhm @ 30A, 5V
Vgs(th) (Max) @ Id 2.5V @ 12mA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 5 V
Vgs (Max) +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds 1410 pF @ 40 V
FET Feature -
Power Dissipation (Max) -
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package Die
Package / Case Die
2,739 In Stock
rhos iso9001 iso13485 iso14001 iso45001
Minimum: 1
Unit Price: $5.50
Total Price: $5.50
This price is for reference only, please contact us for now price support@easev.net.

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