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EPC2023

EPC
EPC2023
GANFET N-CH 30V 60A DIE
Die
Active
EPC2023
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EPC2023 Attributes
TYPE DESCRIPTION SELECT
Series eGaN®
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 60A (Ta)
Drive Voltage (Max Rds On, Min Rds On) -
Rds On (Max) @ Id, Vgs 1.3mOhm @ 40A, 5V
Vgs(th) (Max) @ Id 2.5V @ 20mA
Gate Charge (Qg) (Max) @ Vgs -
Vgs (Max) -
Input Capacitance (Ciss) (Max) @ Vds 2300 pF @ 15 V
FET Feature -
Power Dissipation (Max) -
Operating Temperature -
Mounting Type Surface Mount
Supplier Device Package Die
Package / Case Die
589 In Stock
rhos iso9001 iso13485 iso14001 iso45001
Minimum: 1
Unit Price: $5.24
Total Price: $5.24
This price is for reference only, please contact us for now price support@easev.net.

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