Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
EPC2021ENGR
EPC
EPC2021ENGR
TRANS GAN 80V 60A BUMPED DIE
Die
Active
Payment Methods:
Shipping Methods:
EPC2021ENGR Attributes
TYPE | DESCRIPTION | SELECT |
---|---|---|
Series | eGaN® | |
FET Type | N-Channel | |
Technology | GaNFET (Gallium Nitride) | |
Drain to Source Voltage (Vdss) | 80 V | |
Current - Continuous Drain (Id) @ 25°C | 60A (Ta) | |
Drive Voltage (Max Rds On, Min Rds On) | 5V | |
Rds On (Max) @ Id, Vgs | 2.5mOhm @ 29A, 5V | |
Vgs(th) (Max) @ Id | 2.5V @ 14mA | |
Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 5 V | |
Vgs (Max) | +6V, -4V | |
Input Capacitance (Ciss) (Max) @ Vds | 1700 pF @ 40 V | |
FET Feature | - | |
Power Dissipation (Max) | - | |
Operating Temperature | -40°C ~ 150°C (TJ) | |
Grade | - | |
Qualification | - | |
Mounting Type | Surface Mount | |
Supplier Device Package | Die | |
Package / Case | Die |
6,224
In Stock
Minimum: 1
Unit Price:
N/A
Total Price:
N/A
This price is for reference only, please contact us for now price support@easev.net.