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EPC2015C

EPC
EPC2015C
GANFET N-CH 40V 53A DIE
Die
Active
EPC2015C
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EPC2015C Attributes
TYPE DESCRIPTION SELECT
Series eGaN®
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 53A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 4mOhm @ 33A, 5V
Vgs(th) (Max) @ Id 2.5V @ 9mA
Gate Charge (Qg) (Max) @ Vgs 8.7 nC @ 5 V
Vgs (Max) +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds 1180 pF @ 20 V
FET Feature -
Power Dissipation (Max) -
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package Die
Package / Case Die
7,751 In Stock
rhos iso9001 iso13485 iso14001 iso45001
Minimum: 1
Unit Price: $2.38
Total Price: $2.38
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