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EPC2015
EPC
EPC2015
GANFET N-CH 40V 33A DIE OUTLINE
Die
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EPC2015 Attributes
TYPE | DESCRIPTION | SELECT |
---|---|---|
Series | eGaN® | |
FET Type | N-Channel | |
Technology | GaNFET (Gallium Nitride) | |
Drain to Source Voltage (Vdss) | 40 V | |
Current - Continuous Drain (Id) @ 25°C | 33A (Ta) | |
Drive Voltage (Max Rds On, Min Rds On) | 5V | |
Rds On (Max) @ Id, Vgs | 4mOhm @ 33A, 5V | |
Vgs(th) (Max) @ Id | 2.5V @ 9mA | |
Gate Charge (Qg) (Max) @ Vgs | 11.6 nC @ 5 V | |
Vgs (Max) | +6V, -5V | |
Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 20 V | |
FET Feature | - | |
Power Dissipation (Max) | - | |
Operating Temperature | -40°C ~ 150°C (TJ) | |
Grade | - | |
Qualification | - | |
Mounting Type | Surface Mount | |
Supplier Device Package | Die | |
Package / Case | Die |
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