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EPC2012C
EPC
EPC2012C
GANFET N-CH 200V 5A DIE OUTLINE
Die
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EPC2012C Attributes
TYPE | DESCRIPTION | SELECT |
---|---|---|
Series | eGaN® | |
FET Type | N-Channel | |
Technology | GaNFET (Gallium Nitride) | |
Drain to Source Voltage (Vdss) | 200 V | |
Current - Continuous Drain (Id) @ 25°C | 5A (Ta) | |
Drive Voltage (Max Rds On, Min Rds On) | 5V | |
Rds On (Max) @ Id, Vgs | 100mOhm @ 3A, 5V | |
Vgs(th) (Max) @ Id | 2.5V @ 1mA | |
Gate Charge (Qg) (Max) @ Vgs | 1.3 nC @ 5 V | |
Vgs (Max) | +6V, -4V | |
Input Capacitance (Ciss) (Max) @ Vds | 140 pF @ 100 V | |
FET Feature | - | |
Power Dissipation (Max) | - | |
Operating Temperature | -40°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Supplier Device Package | Die | |
Package / Case | Die |
8,413
In Stock
Minimum: 1
Unit Price:
$1.32
Total Price:
$1.32
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