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EPC2001C

EPC
EPC2001C
GANFET N-CH 100V 36A DIE OUTLINE
Die
Active
EPC2001C
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EPC2001C Attributes
TYPE DESCRIPTION SELECT
Series eGaN®
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 36A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 7mOhm @ 25A, 5V
Vgs(th) (Max) @ Id 2.5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs 9 nC @ 5 V
Vgs (Max) +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds 900 pF @ 50 V
FET Feature -
Power Dissipation (Max) -
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package Die
Package / Case Die
2,772 In Stock
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Minimum: 1
Unit Price: $2.42
Total Price: $2.42
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