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FBG30N04CC

EPC Space, LLC
FBG30N04CC
GAN FET HEMT 300V4A COTS 4FSMD-C
4-SMD, No Lead
Active
FBG30N04CC
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FBG30N04CC Attributes
TYPE DESCRIPTION SELECT
Series -
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 300 V
Current - Continuous Drain (Id) @ 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 404mOhm @ 4A, 5V
Vgs(th) (Max) @ Id 2.8V @ 600µA
Gate Charge (Qg) (Max) @ Vgs 2.6 nC @ 5 V
Vgs (Max) +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds 450 pF @ 150 V
FET Feature -
Power Dissipation (Max) -
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 4-SMD
Package / Case 4-SMD, No Lead
1,855 In Stock
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Minimum: 1
Unit Price: $222.64
Total Price: $222.64
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