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ZVN2110ASTOA

Diodes Incorporated
ZVN2110ASTOA
MOSFET N-CH 100V 320MA E-LINE
E-Line-3
Active
ZVN2110ASTOA
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ZVN2110ASTOA Attributes
TYPE DESCRIPTION SELECT
Series -
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 320mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 4Ohm @ 1A, 10V
Vgs(th) (Max) @ Id 2.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs -
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 75 pF @ 25 V
FET Feature -
Power Dissipation (Max) 700mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package E-Line (TO-92 compatible)
Package / Case E-Line-3
7,022 In Stock
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Minimum: 1
Unit Price: N/A
Total Price: N/A
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