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DMN26D0UFB4-7

Diodes Incorporated
DMN26D0UFB4-7
MOSFET N-CH 20V 230MA 3DFN
3-XFDFN
Active
DMN26D0UFB4-7
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DMN26D0UFB4-7 Attributes
TYPE DESCRIPTION SELECT
Series -
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 230mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 3Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs -
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 14.1 pF @ 15 V
FET Feature -
Power Dissipation (Max) 350mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package X2-DFN1006-3
Package / Case 3-XFDFN
2,049 In Stock
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Minimum: 1
Unit Price: N/A
Total Price: N/A
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