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DMN1032UCB4-7
Diodes Incorporated
DMN1032UCB4-7
MOSFET N-CH 12V 4.8A U-WLB1010-4
4-UFBGA, WLBGA
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DMN1032UCB4-7 Attributes
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Series | - | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 12 V | |
| Current - Continuous Drain (Id) @ 25°C | 4.8A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V | |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 1A, 4.5V | |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 4.5 nC @ 4.5 V | |
| Vgs (Max) | ±8V | |
| Input Capacitance (Ciss) (Max) @ Vds | 450 pF @ 6 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 900mW (Ta) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Grade | - | |
| Qualification | - | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | U-WLB1010-4 | |
| Package / Case | 4-UFBGA, WLBGA |
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