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2N5551
Diodes Incorporated
2N5551
BJT TO92 160V NPN 0.625W 150C
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
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2N5551 Attributes
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Series | - | |
| Transistor Type | NPN | |
| Current - Collector (Ic) (Max) | 200 mA | |
| Voltage - Collector Emitter Breakdown (Max) | 160 V | |
| Vce Saturation (Max) @ Ib, Ic | 200mV @ 5mA, 50mA | |
| Current - Collector Cutoff (Max) | - | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V | |
| Power - Max | 625 mW | |
| Frequency - Transition | 300MHz | |
| Operating Temperature | - | |
| Grade | - | |
| Qualification | - | |
| Mounting Type | Through Hole | |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | |
| Supplier Device Package | TO-92 |
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