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CC-C2-B15-0322

CoolCAD
CC-C2-B15-0322
SiC Power MOSFET 1200V 12A
TO-247-4
Active
CC-C2-B15-0322
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CC-C2-B15-0322 Attributes
TYPE DESCRIPTION SELECT
Series -
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 12A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 15V
Rds On (Max) @ Id, Vgs 135mOhm @ 10A, 15V
Vgs(th) (Max) @ Id 3.2V @ 5mA
Gate Charge (Qg) (Max) @ Vgs 40 nC @ 15 V
Vgs (Max) +15V, -5V
Input Capacitance (Ciss) (Max) @ Vds 1810 pF @ 200 V
FET Feature Standard
Power Dissipation (Max) 100W (Tc)
Operating Temperature -40°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247
Package / Case TO-247-4
3,629 In Stock
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Minimum: 1
Unit Price: $10.50
Total Price: $10.50
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