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CGD65B200S2-T13
Cambridge GaN Devices
CGD65B200S2-T13
650V GAN HEMT, 200MOHM, DFN5X6.
8-PowerVDFN
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CGD65B200S2-T13 Attributes
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Series | ICeGaN™ | |
| FET Type | - | |
| Technology | GaNFET (Gallium Nitride) | |
| Drain to Source Voltage (Vdss) | 650 V | |
| Current - Continuous Drain (Id) @ 25°C | 8.5A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 9V, 20V | |
| Rds On (Max) @ Id, Vgs | 280mOhm @ 600mA, 12V | |
| Vgs(th) (Max) @ Id | 4.2V @ 2.75mA | |
| Gate Charge (Qg) (Max) @ Vgs | 1.4 nC @ 12 V | |
| Vgs (Max) | +20V, -1V | |
| Input Capacitance (Ciss) (Max) @ Vds | - | |
| FET Feature | Current Sensing | |
| Power Dissipation (Max) | - | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | 8-DFN (5x6) | |
| Package / Case | 8-PowerVDFN |
6,326
In Stock
Minimum: 1
Unit Price:
$1.49
Total Price:
$1.49
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