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AS1M040120T
ANBON SEMICONDUCTOR (INT'L) LIMITED
AS1M040120T
N-CHANNEL SILICON CARBIDE POWER
TO-247-4
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AS1M040120T Attributes
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Series | - | |
| FET Type | N-Channel | |
| Technology | SiCFET (Silicon Carbide) | |
| Drain to Source Voltage (Vdss) | 1200 V | |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 20V | |
| Rds On (Max) @ Id, Vgs | 55mOhm @ 40A, 20V | |
| Vgs(th) (Max) @ Id | 4V @ 10mA | |
| Gate Charge (Qg) (Max) @ Vgs | 142 nC @ 20 V | |
| Vgs (Max) | +25V, -10V | |
| Input Capacitance (Ciss) (Max) @ Vds | 2946 pF @ 1000 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 330W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | TO-247-4 | |
| Package / Case | TO-247-4 |
280
In Stock
Minimum: 1
Unit Price:
$14.50
Total Price:
$14.50
This price is for reference only, please contact us for now price support@easev.net.
