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2N7002E

ANBON SEMICONDUCTOR (INT'L) LIMITED
2N7002E
N-CHANNEL SMD MOSFET ESD PROTECT
TO-236-3, SC-59, SOT-23-3
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2N7002E
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2N7002E Attributes
TYPE DESCRIPTION SELECT
Series -
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 340mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 5Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 2.4 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 18 pF @ 30 V
FET Feature -
Power Dissipation (Max) 350mW (Ta)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23
Package / Case TO-236-3, SC-59, SOT-23-3
8,418 In Stock
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Unit Price: $0.02
Total Price: $0.02
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