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AOWF10T60

Alpha & Omega Semiconductor Inc.
AOWF10T60
MOSFET N-CH 600V 10A TO262F
TO-262-3 Full Pack, I²Pak
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AOWF10T60
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AOWF10T60 Attributes
TYPE DESCRIPTION SELECT
Series -
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 700mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1346 pF @ 100 V
FET Feature -
Power Dissipation (Max) 28W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-262F
Package / Case TO-262-3 Full Pack, I²Pak
3,468 In Stock
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