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AOTF7S65L

Alpha & Omega Semiconductor Inc.
AOTF7S65L
MOSFET
TO-220-3 Full Pack
Active
AOTF7S65L
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AOTF7S65L Attributes
TYPE DESCRIPTION SELECT
Series aMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 650mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 9.2 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 434 pF @ 25 V
FET Feature -
Power Dissipation (Max) 27W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-220F
Package / Case TO-220-3 Full Pack
8,394 In Stock
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Unit Price: N/A
Total Price: N/A
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