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AOP605

Alpha & Omega Semiconductor Inc.
AOP605
MOSFET N/P-CH 30V 8DIP
8-DIP (0.300", 7.62mm)
Active
AOP605
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AOP605 Attributes
TYPE DESCRIPTION SELECT
Series -
Technology MOSFET (Metal Oxide)
Configuration N and P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C -
Rds On (Max) @ Id, Vgs 28mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 16.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 820pF @ 15V
Power - Max 2.5W
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Package / Case 8-DIP (0.300", 7.62mm)
Supplier Device Package 8-PDIP
7,581 In Stock
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