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AON6562

Alpha & Omega Semiconductor Inc.
AON6562
MOSFET N-CH 30V 29A/32A 8DFN
8-VDFN Exposed Pad
Active
AON6562
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AON6562 Attributes
TYPE DESCRIPTION SELECT
Series AlphaMOS
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 29A (Ta), 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 33 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1550 pF @ 15 V
FET Feature -
Power Dissipation (Max) 6W (Ta), 25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package 8-DFN (5x6)
Package / Case 8-VDFN Exposed Pad
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