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AON5802BG
Alpha & Omega Semiconductor Inc.
AON5802BG
MOSFET 2N-CH 30V 10A 6DFN
6-WFDFN Exposed Pad
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AON5802BG Attributes
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Series | - | |
| Technology | MOSFET (Metal Oxide) | |
| Configuration | 2 N-Channel (Dual) | |
| FET Feature | - | |
| Drain to Source Voltage (Vdss) | 30V | |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) | |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 7A, 4.5V | |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 32nC @ 10V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1050pF @ 15V | |
| Power - Max | 3.1W (Ta) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Grade | - | |
| Qualification | - | |
| Mounting Type | Surface Mount | |
| Package / Case | 6-WFDFN Exposed Pad | |
| Supplier Device Package | 6-DFN-EP (2x5) |
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