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ALD111933MAL

Advanced Linear Devices Inc.
ALD111933MAL
MOSFET 2N-CH 10.6V 8MSOP
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
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ALD111933MAL
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ALD111933MAL Attributes
TYPE DESCRIPTION SELECT
Series EPAD®
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual) Matched Pair
FET Feature -
Drain to Source Voltage (Vdss) 10.6V
Current - Continuous Drain (Id) @ 25°C -
Rds On (Max) @ Id, Vgs 500Ohm @ 5.9V
Vgs(th) (Max) @ Id 3.35V @ 1µA
Gate Charge (Qg) (Max) @ Vgs -
Input Capacitance (Ciss) (Max) @ Vds 2.5pF @ 5V
Power - Max 500mW
Operating Temperature 0°C ~ 70°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Package / Case 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package 8-MSOP
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