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ALD1108EPCL
Advanced Linear Devices Inc.
ALD1108EPCL
MOSFET 4N-CH 10V 16DIP
16-DIP (0.300", 7.62mm)
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ALD1108EPCL Attributes
TYPE | DESCRIPTION | SELECT |
---|---|---|
Series | EPAD® | |
Technology | MOSFET (Metal Oxide) | |
Configuration | 4 N-Channel, Matched Pair | |
FET Feature | - | |
Drain to Source Voltage (Vdss) | 10V | |
Current - Continuous Drain (Id) @ 25°C | - | |
Rds On (Max) @ Id, Vgs | 500Ohm @ 5V | |
Vgs(th) (Max) @ Id | 1.01V @ 1µA | |
Gate Charge (Qg) (Max) @ Vgs | - | |
Input Capacitance (Ciss) (Max) @ Vds | 25pF @ 5V | |
Power - Max | 600mW | |
Operating Temperature | 0°C ~ 70°C (TJ) | |
Grade | - | |
Qualification | - | |
Mounting Type | Through Hole | |
Package / Case | 16-DIP (0.300", 7.62mm) | |
Supplier Device Package | 16-PDIP |
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