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SQV120N06-4M7L_GE3
Vishay Siliconix
SQV120N06-4M7L_GE3
MOSFET N-CH 60V 120A TO262-3
TO-262-3 Long Leads, I²Pak, TO-262AA
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SQV120N06-4M7L_GE3 Attributes
TYPE | DESCRIPTION | SELECT |
---|---|---|
Series | TrenchFET® | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 60 V | |
Current - Continuous Drain (Id) @ 25°C | 120A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 4.7mOhm @ 30A, 10V | |
Vgs(th) (Max) @ Id | 2.5V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 230 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 8800 pF @ 25 V | |
FET Feature | - | |
Power Dissipation (Max) | 250W (Tc) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Grade | Automotive | |
Qualification | AEC-Q101 | |
Mounting Type | Through Hole | |
Supplier Device Package | TO-262-3 | |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
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