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SIS778DN-T1-GE3
Vishay Siliconix
SIS778DN-T1-GE3
MOSFET N-CH 30V 35A PPAK1212-8
PowerPAK® 1212-8
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SIS778DN-T1-GE3 Attributes
TYPE | DESCRIPTION | SELECT |
---|---|---|
Series | - | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 30 V | |
Current - Continuous Drain (Id) @ 25°C | 35A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 5mOhm @ 10A, 10V | |
Vgs(th) (Max) @ Id | 2.2V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 42.5 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 1390 pF @ 15 V | |
FET Feature | Schottky Diode (Body) | |
Power Dissipation (Max) | 52W (Tc) | |
Operating Temperature | -50°C ~ 150°C (TJ) | |
Grade | - | |
Qualification | - | |
Mounting Type | Surface Mount | |
Supplier Device Package | PowerPAK® 1212-8 | |
Package / Case | PowerPAK® 1212-8 |
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