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SIS436DN-T1-GE3
Vishay Siliconix
SIS436DN-T1-GE3
MOSFET N-CH 25V 16A PPAK 1212-8
PowerPAK® 1212-8
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SIS436DN-T1-GE3 Attributes
TYPE | DESCRIPTION | SELECT |
---|---|---|
Series | TrenchFET® | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 25 V | |
Current - Continuous Drain (Id) @ 25°C | 16A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 10.5mOhm @ 10A, 10V | |
Vgs(th) (Max) @ Id | 2.3V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 855 pF @ 10 V | |
FET Feature | - | |
Power Dissipation (Max) | 3.5W (Ta), 27.7W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Grade | - | |
Qualification | - | |
Mounting Type | Surface Mount | |
Supplier Device Package | PowerPAK® 1212-8 | |
Package / Case | PowerPAK® 1212-8 |
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