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SI4712DY-T1-GE3
Vishay Siliconix
SI4712DY-T1-GE3
MOSFET N-CH 30V 14.6A 8SO
8-SOIC (0.154", 3.90mm Width)
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SI4712DY-T1-GE3 Attributes
TYPE | DESCRIPTION | SELECT |
---|---|---|
Series | SkyFET®, TrenchFET® | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 30 V | |
Current - Continuous Drain (Id) @ 25°C | 14.6A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 13mOhm @ 15A, 10V | |
Vgs(th) (Max) @ Id | 2.5V @ 1mA | |
Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 1084 pF @ 15 V | |
FET Feature | - | |
Power Dissipation (Max) | 2.5W (Ta), 5W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Grade | - | |
Qualification | - | |
Mounting Type | Surface Mount | |
Supplier Device Package | 8-SOIC | |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
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