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3N163-2

Vishay Siliconix
3N163-2
MOSFET P-CH 40V 50MA TO72
TO-206AF, TO-72-4 Metal Can
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3N163-2
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3N163-2 Attributes
TYPE DESCRIPTION SELECT
Series -
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 50mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 20V
Rds On (Max) @ Id, Vgs 250Ohm @ 100µA, 20V
Vgs(th) (Max) @ Id 5V @ 10µA
Gate Charge (Qg) (Max) @ Vgs -
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 3.5 pF @ 15 V
FET Feature -
Power Dissipation (Max) 375mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-72
Package / Case TO-206AF, TO-72-4 Metal Can
3,136 In Stock
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