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TP65H150LSG
Transphorm
TP65H150LSG
GANFET N-CH 650V 15A 3PQFN
3-PowerDFN
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TP65H150LSG Attributes
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Series | - | |
| FET Type | N-Channel | |
| Technology | GaNFET (Gallium Nitride) | |
| Drain to Source Voltage (Vdss) | 650 V | |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 10A, 10V | |
| Vgs(th) (Max) @ Id | 4.8V @ 500µA | |
| Gate Charge (Qg) (Max) @ Vgs | 7.1 nC @ 10 V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 576 pF @ 400 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 69W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Grade | - | |
| Qualification | - | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | 3-PQFN (8x8) | |
| Package / Case | 3-PowerDFN |
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