Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
TP44100SG
Tagore Technology
TP44100SG
GAN FET HEMT 650V .118OHM 22QFN
22-PowerVFQFN
Active
Payment Methods:
Shipping Methods:
TP44100SG Attributes
TYPE | DESCRIPTION | SELECT |
---|---|---|
Series | - | |
FET Type | N-Channel | |
Technology | GaNFET (Gallium Nitride) | |
Drain to Source Voltage (Vdss) | 650 V | |
Current - Continuous Drain (Id) @ 25°C | 19A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 0V, 6V | |
Rds On (Max) @ Id, Vgs | 118mOhm @ 500mA, 6V | |
Vgs(th) (Max) @ Id | 2.5V @ 11mA | |
Gate Charge (Qg) (Max) @ Vgs | 3 nC @ 6 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 110 pF @ 400 V | |
FET Feature | - | |
Power Dissipation (Max) | - | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Grade | - | |
Qualification | - | |
Mounting Type | Surface Mount | |
Supplier Device Package | 22-QFN (5x7) | |
Package / Case | 22-PowerVFQFN |
745
In Stock
Minimum: 1
Unit Price:
$2.28
Total Price:
$2.28
This price is for reference only, please contact us for now price support@easev.net.